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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open base OND IC CONDITIONS TOR UC VALUE 150 100 7 10 20 3.5 UNIT V V V A A A Open emitter Emitter-base voltage Open collector Collector current Collector current-Peak Base current Ta=25ae 1.5 W 60 150 -55~150 ae ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3157 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=5A ;IB1=0.5A;L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VCE=100V; VBE=1.5V Ta=125ae VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 MIN 100 0.6 1.5 0.01 0.01 1.0 0.01 TYP. MAX UNIT V V V mA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 Switching times ton ts tf IN Fall time DC current gain Turn-on time Storage time CHA E SEM NG OND IC 20 TOR UC 200 0.5 1.5 0.5 |I |I |I s s s IC=5A;IB1=-IB2=0.5A , RL=10| ;VCCO 50V hFE-2 classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3157 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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